| 产品型号 | 规格书 | 产品图片 | 供电电压 (V) |
频率 (MHz) |
工作温度范围 (°C) |
封装尺寸 长 x 宽 x 高 (mm) |
电流(mA) | 相位噪声@10kHz(dBc/Hz) | 年老化率(PPM) | 输出波形 | 频率稳定性与工作温度 |
| TCXO2522BJ-80MHz-A-V |
|
|
5 | 80 | -40 to +85 | 25.4 x 22 x 11.5 | 40 | -155 | ±1 | HCMOS | ±1.0ppm |
| TCXO2522BJ-80MHz-B-V |
|
|
5 | 80 | -40 to +85 | 25.4 x 22 x 11.5 | 30 | -155 | ±1 | Sinewave | ±1.0ppm |
| TCXO5300BM-40MHz-A-V |
|
|
3.3 | 40 | -40 to +85 | 5.0 x 3.2 x 1.85 | 7 | -150 | ±1 | CMOS | ±0.5ppm |
| TCXO5300BM-26MHz-A-V |
|
|
3.3 | 26 | -40 to +85 | 5.0 x 3.2 x 1.85 | 4 | / | ±1 | Clipped Sinewave | ±0.5ppm |
| TCXO5300BM-16.384MHz-A-V |
|
|
3.3 | 16.384 | -40 to +85 | 5.0 x 3.2 x 1.85 | 4 | / | ±1 | Clipped Sinewave | ±0.5ppm |
| TCXO5300BM-32MHz-A-V |
|
|
3.3 | 32 | -40 to +85 | 5.0 x 3.2 x 1.85 | 6 | / | ±1 | CMOS | ±0.28ppm |
| TCXO1490CL-10MHz-A-V |
|
|
3.3 | 10 | -40 to +85 | 14.6 x 9. 4 x 6.0 | 45 | -150 | ±1 | Sinewave | ±0.28ppm |
| TCXO1196BE-56MHz-A-V |
|
|
5 | 56 | -40 to +85 | 11.4 x 9.6 x 5.0 | 20 | / | ±1 | Sinewave | ±2ppm |
| TCXO1490BM-100MHz-B-V |
|
|
5 | 100 | -40 to +85 | 14.3 x 9.6 x 6.5 | 40 | -155 | ±3 | Sinewave | ±0.5ppm |
| TCXO3225BM-25MHz-A-V |
|
|
2.5 | 25 | -40 to +85 | 3.2 x 2.5 x 0.9 | 1.5 | -150 | ±1 | Clipped Sinewave | ±1.0ppm |
| TCXO2013BE-55MHz-B |
|
|
3.3 | 55 | -40 to +85 | 20.7 x 13.06 x 7.5 | 25 | / | ±10ppm 10 years | HCMOS | ±1.0ppm |
| TCXO3225BM-40MHz-A |
|
|
2.8 | 40 | -40 to +85 | 3.2 x 2.5 x 0.9 | 2 | / | ±1 | Clipped Sinewave | ±0.5ppm |
| TCXO5300CL-10.23MHz-A |
|
|
3.3 | 10.23 | -40 to +85 | 5.2 x 3.4 x 2.0 | 12 | -150 | ±1 | LVCMOS | ±0.5ppm |
| TCXO7500BM-HS-25MHz-B |
|
|
3.3 | 25 | 0 to +70 | 7 x 5 x 1.9 | 6 | -152 | ±1 | CMOS | ±0.05ppm |